Производитель: Vishay/Siliconix  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 16nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.3A  •  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 1.3W  •  Mounting Type: Through Hole  •  Package / Case: 4-DIP, HVMDIP  •  Встречается под наим.: *IRFD123PBF