Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V  •  Drain to Source Voltage (Vdss): 650V  •  Gate Charge (Qg) @ Vgs: 48nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 5.1A  •  Input Capacitance (Ciss) @ Vds: 1417pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 60W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB  •  Встречается под наим.: *IRFIB5N65A