Характеристики | ![Скрыть](/static/search/close.gif) ![](/static/photo/mini/irf/123330.gif) Производитель: Vishay/Siliconix • Вредные вещества: RoHS Без свинца • Серия: HEXFET® • Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V • Drain to Source Voltage (Vdss): 500V • Gate Charge (Qg) @ Vgs: 92nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 6.8A • Input Capacitance (Ciss) @ Vds: 2220pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 46W • Mounting Type: Through Hole • Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB • Встречается под наим.: *IRFIB7N50LPBF |