Производитель: Vishay/Siliconix  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 49nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 9.2A  •  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 170W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Встречается под наим.: *IRFS9N60A