Производитель: International Rectifier  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 140nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 195A  •  Input Capacitance (Ciss) @ Vds: 11210pF @ 50V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 380W  •  Mounting Type: Through Hole  •  Package / Case: TO-262