Характеристики | ![Скрыть](/static/search/close.gif) ![](/static/photo/mini/hexfets/123686.gif) Производитель: Vishay/Siliconix • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 5V • Drain to Source Voltage (Vdss): 100V • Gate Charge (Qg) @ Vgs: 12nC @ 5V • Current - Continuous Drain (Id) @ 25° C: 7.7A • Input Capacitance (Ciss) @ Vds: 490pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 2.5W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) • Встречается под наим.: *IRLU120PBF |