Производитель: SANYO Semiconductor (U.S.A) Co  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 890 mOhm @ 400mA, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 4.8nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 800mA  •  Input Capacitance (Ciss) @ Vds: 165pF @ 20V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 900mW  •  Mounting Type: Surface Mount  •  Встречается под наим.: 869-1170-6