Характеристики | ![Скрыть](/static/search/close.gif) Производитель: ON Semiconductor • Вредные вещества: RoHS Без свинца • Обратите внимание: Снят с производства - 01 oct 2008 • Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V • Drain to Source Voltage (Vdss): 100V • Gate Charge (Qg) @ Vgs: 20nC @ 5V • Current - Continuous Drain (Id) @ 25° C: 12A • Input Capacitance (Ciss) @ Vds: 700pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 1.28W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) |