Производитель: NXP Semiconductors  •  Вредные вещества: RoHS   Без свинца  •  Серия: TrenchMOS™  •  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Current - Continuous Drain (Id) @ 25° C: 300mA  •  Input Capacitance (Ciss) @ Vds: 40pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 830mW  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3