Производитель: Vishay/Siliconix  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 174 mOhm @ 3.8A, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 135nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 2.2A  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.9W  •  Mounting Type: Surface Mount  •  Package / Case: PowerPAK® SO-8