Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 400 mOhm @ 900mA, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 11nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.8A  •  Input Capacitance (Ciss) @ Vds: 440pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 1W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOP  •  Встречается под наим.: TPC8012-HCT, TPC8012-HCT-ND, TPC8012-HQCT