Производитель: Infineon Technologies  •  Серия: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 5.8nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 90mA  •  Input Capacitance (Ciss) @ Vds: 131pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-89  •  Встречается под наим.: BSS225T, SP000017502