Производитель: Fairchild Semiconductor  •  Вредные вещества: RoHS   Без свинца  •  Обратите внимание: Passivation Material Change 14 may 2008  •  Серия: QFET™  •  Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.75A, 10V  •  Drain to Source Voltage (Vdss): 500V  •  Gate Charge (Qg) @ Vgs: 56nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 13.5A  •  Input Capacitance (Ciss) @ Vds: 2055pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 218W  •  Mounting Type: Through Hole  •  Package / Case: TO-3PN-3