Производитель: International Rectifier  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 37nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 17A  •  Input Capacitance (Ciss) @ Vds: 920pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 3.8W  •  Mounting Type: Through Hole  •  Package / Case: TO-262-3 (Straight Leads)  •  Встречается под наим.: *IRF530NL