Производитель: Vishay/Siliconix  •  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 31nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3.6A  •  Input Capacitance (Ciss) @ Vds: 660pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 3.1W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Встречается под наим.: *IRFBC30L