Производитель: ON Semiconductor  •  Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.5A, 10V  •  Drain to Source Voltage (Vdss): 20V  •  Current - Continuous Drain (Id) @ 25° C: 750mA  •  Input Capacitance (Ciss) @ Vds: 130pF @ 5V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 400mW  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3  •  Встречается под наим.: MGSF1P02LT1OSCT