Производитель: Infineon Technologies  •  Серия: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 190nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 6640pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 300W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Встречается под наим.: SP000014001, SPP80N06S2LH5