APTM10UM01FAG — MOSFET N-CH 100V 860A SP6
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | APT5010JVRU3 | Microsemi-PPG | MOSFET N-CH 500V 44A SOT227 Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 312nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 7410pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 450W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| APTM50DAM35TG | Microsemi-PPG | MOSFET N-CH 500V 99A SP4 Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 99A · Input Capacitance (Ciss) @ Vds: 14000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 781W · Mounting Type: Chassis Mount · Package / Case: SP4 Module | от 0,00 | Доп. информация Искать в поставщиках | |
| APT50M60JVR | Microsemi-PPG | MOSFET N-CH 500V 63A SOT-227 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 560nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 63A · Input Capacitance (Ciss) @ Vds: 10600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 568W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT8018L2VRG | Microsemi-PPG | MOSFET N-CH 800V 43A TO-264MAX Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 21.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 610nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 10700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 833W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10M25BVFRG | Microsemi-PPG | MOSFET N-CH 100V 75A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 225nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT34F100B2 | Microsemi-PPG | MOSFET N-CH 1000V 34A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 9835pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1135W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
| APT6013JFLL | Microsemi-PPG | MOSFET N-CH 600V 39A SOT-227 Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 39A · Input Capacitance (Ciss) @ Vds: 5630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 460W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT8065BVRG | Microsemi-PPG | MOSFET N-CH 800V 13A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 225nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 3700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT5024BVRG | Microsemi-PPG | MOSFET N-CH 500V 22A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 221nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 4320pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT8065SVFRG | Microsemi-PPG | MOSFET N-CH 800V 13A D3PAK Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 225nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 3700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Surface Mount · Package / Case: D³Pak (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | APL502J | Microsemi-PPG | MOSFET N-CH 500V 52A SOT-227 Rds On (Max) @ Id, Vgs: 90 mOhm @ 26A, 12V · Drain to Source Voltage (Vdss): 500V · Current - Continuous Drain (Id) @ 25° C: 52A · Input Capacitance (Ciss) @ Vds: 9000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 568W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| APTM120UM70FAG | Microsemi-PPG | MOSFET N-CH 1200V 171A SP6 Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 1650nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 171A · Input Capacitance (Ciss) @ Vds: 43500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5000W · Mounting Type: Chassis Mount · Package / Case: SP6 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT6030BVRG | Microsemi-PPG | MOSFET N-CH 600V 21A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 3750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 298W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APTM20DAM08TG | Microsemi-PPG | MOSFET N-CH 200V 208A SP4 Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 208A · Input Capacitance (Ciss) @ Vds: 14400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 781W · Mounting Type: Chassis Mount · Package / Case: SP4 Module | от 0,00 | Доп. информация Искать в поставщиках | |
 | APT38F80B2 | Microsemi-PPG | MOSFET N-CH 800V 41A T-MAX Rds On (Max) @ Id, Vgs: 280 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 41A · Input Capacitance (Ciss) @ Vds: 8070pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| APT6017B2FLLG | Microsemi-PPG | MOSFET N-CH 600V 35A T-MAX Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 17.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 500W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
| APT20M45SVRG | Microsemi-PPG | MOSFET N-CH 200V 56A D3PAK Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 195nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 56A · Input Capacitance (Ciss) @ Vds: 4860pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D³Pak (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| APTM20UM03FAG | Microsemi-PPG | MOSFET N-CH 200V 580A SP6 Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 290A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 840nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 580A · Input Capacitance (Ciss) @ Vds: 43300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2270W · Mounting Type: Chassis Mount · Package / Case: SP6 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT50M80B2VRG | Microsemi-PPG | MOSFET N-CH 500V 58A T-MAX Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 423nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 58A · Input Capacitance (Ciss) @ Vds: 8797pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10M25SVRG | Microsemi-PPG | MOSFET N-CH 100V 75A D3PAK Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 225nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D³Pak (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| APT30M85BVRG | Microsemi-PPG | MOSFET N-CH 300V 40A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 195nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 4950pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APTM100DA18T1G | Microsemi-PPG | MOSFET N-CH 1000V 40A SP1 Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 570nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 14800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 657W · Mounting Type: Chassis Mount · Package / Case: SP1 Module | от 0,00 | Доп. информация Искать в поставщиках | |
| APTM10SKM02G | Microsemi-PPG | MOSFET N-CH 100V 495A SP6 Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 1360nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 495A · Input Capacitance (Ciss) @ Vds: 40000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1250W · Mounting Type: Chassis Mount · Package / Case: SP6 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT20M16B2LLG | Microsemi-PPG | MOSFET N-CH 200V 100A T-MAX Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 7220pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 694W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
| APTM20UM04SAG | Microsemi-PPG | MOSFET N-CH 200V 417A SP6 Rds On (Max) @ Id, Vgs: 5 mOhm @ 208.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 560nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 417A · Input Capacitance (Ciss) @ Vds: 28800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1560W · Mounting Type: Chassis Mount · Package / Case: SP6 | от 0,00 | Доп. информация Искать в поставщиках |
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