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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APTM50DAM35TG — MOSFET N-CH 500V 99A SP4

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs39 mOhm @ 49.5A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs280nC @ 10V
Current - Continuous Drain (Id) @ 25° C99A
Input Capacitance (Ciss) @ Vds14000pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max781W
Mounting TypeChassis Mount
Package / CaseSP4 Module
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT8024LVRGMicrosemi-PPGMOSFET N-CH 800V 33A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 7740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10043JVRMicrosemi-PPGMOSFET N-CH 1000V 22A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 480nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT12060B2VFRGMicrosemi-PPGMOSFET N-CH 1200V 20A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 600 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 650nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 9500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5010JVRU2APT5010JVRU2Microsemi-PPGMOSFET N-CH 500V 44A SOT227
Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 312nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 7410pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT50M50JVFRMicrosemi-PPGMOSFET N-CH 500V 77A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 1000nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 77A  ·  Input Capacitance (Ciss) @ Vds: 19600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT12057B2FLLGMicrosemi-PPGMOSFET N-CH 1200V 22A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 5155pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APL502B2GAPL502B2GMicrosemi-PPGMOSFET N-CH 500V 58A T-MAX
Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V  ·  Drain to Source Voltage (Vdss): 500V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 730W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APTM100DA18TGMicrosemi-PPGMOSFET N-CH 1000V 43A SP4
Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 372nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 10400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 780W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
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APT20M16LLLGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APTM120SK29TGMicrosemi-PPGMOSFET N-CH 1200V 34A SP4
Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 374nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 10300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 780W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
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APT56M60LAPT56M60LMicrosemi-PPGMOSFET N-CH 600V 56A TO-264
Rds On (Max) @ Id, Vgs: 130 mOhm @ 28A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 56A  ·  Input Capacitance (Ciss) @ Vds: 11300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT60N60BCSGAPT60N60BCSGMicrosemi-PPGMOSFET N-CH 600V 60A TO-247
Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 431W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10026JLLMicrosemi-PPGMOSFET N-CH 1000V 30A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT40M70B2VFRGMicrosemi-PPGMOSFET N-CH 400V 57A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 495nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 57A  ·  Input Capacitance (Ciss) @ Vds: 8890pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10025JVFRMicrosemi-PPGMOSFET N-CH 1000V 34A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 990nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 18000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8024B2VRGMicrosemi-PPGMOSFET N-CH 800V 33A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 425nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 7740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT75M50B2APT75M50B2Microsemi-PPGMOSFET N-CH 500V 75A T-MAX
Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 290nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 11600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APTM10UM01FAGMicrosemi-PPGMOSFET N-CH 100V 860A SP6
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 275A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 860A  ·  Input Capacitance (Ciss) @ Vds: 60000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APT5020SVRGMicrosemi-PPGMOSFET N-CH 500V 26A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT15F60BMicrosemi-PPGMOSFET N-CH 600V 15A TO-247
Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT5018SLLGMicrosemi-PPGMOSFET N-CH 500V 27A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2596pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT4016BVFRGMicrosemi-PPGMOSFET N-CH 400V 27A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 3350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8024JFLLMicrosemi-PPGMOSFET N-CH 800V 29A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT60M75JVFRMicrosemi-PPGMOSFET N-CH 600V 62A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 31A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 1050nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 62A  ·  Input Capacitance (Ciss) @ Vds: 19800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8043SLLGMicrosemi-PPGMOSFET N-CH 800V 20A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 5mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 85nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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