IPD082N10N3 G — MOSFET N-CH 100V 80A TO252-3
| ||||||||||||||||||||||||||||||
| Войти Регистрация |
|
||||||||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IPD70N03S4L-04 | Infineon Technologies | MOSFET N-CH 30V 70A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 3300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPB034N06N3 G | Infineon Technologies | MOSFET N-CH 60V 100A TO263-7 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 11000pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 167W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (7 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP22N03S4L-15 | Infineon Technologies | MOSFET N-CH 30V 22A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| 2N7002 L6327 | Infineon Technologies | MOSFET N-CH 60V 300MA SOT-23 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 20pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPI80N04S2-H4 | Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 148nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP80N06S2L-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3480pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
| IPB80N03S4L-03 | Infineon Technologies | MOSFET N-CH 30V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5100pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPI100N04S3-03 | Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 145nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPB03N03LB G | Infineon Technologies | MOSFET N-CH 30V 80A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 59nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7624pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPI22N03S4L-15 | Infineon Technologies | MOSFET N-CH 30V 22A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPB048N06L G | Infineon Technologies | MOSFET N-CH 60V 100A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 225nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 7600pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| BSC076N06NS3 G | Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4000pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 69W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPB019N06L3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 166nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 28000pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPI80N04S3-06 | Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPB80N04S3-03 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 188W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPD144N06N G | Infineon Technologies | MOSFET N-CH 60V 50A TO-252 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1900pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP80N08S2-07 | Infineon Technologies | MOSFET N-CH 75V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSD214SN L6327 | Infineon Technologies | MOSFET N-CH 20V 1.5A SOT-363 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 143pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP100N06S2-05 | Infineon Technologies | MOSFET N-CH 55V 100A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 6800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
| IPP100N08N3 G | Infineon Technologies | MOSFET N-CH 80V 70A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 2410pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP100N06S3-03 | Infineon Technologies | MOSFET N-CH 55V 100A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 480nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 21620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSC048N025S G | Infineon Technologies | MOSFET N-CH 25V 89A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 21nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 89A · Input Capacitance (Ciss) @ Vds: 2670pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPS090N03L G | Infineon Technologies | MOSFET N-CH 30V 40A TO251-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1600pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 42W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPD30N06S2-23 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 23 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 901pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP12CN10L G | Infineon Technologies | MOSFET N-CH 100V 69A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12 mOhm @ 69A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 69A · Input Capacitance (Ciss) @ Vds: 5600pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
RoHS 
Без свинца