IPP80N08S2-07 — MOSFET N-CH 75V 80A TO220-3
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | IPB100N06S3L-04 | Infineon Technologies | MOSFET N-CH 55V 100A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 362nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 17270pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP80N06S2L-07 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3160pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 210W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSC067N06LS3 G | Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 5100pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 69W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPD30N08S2-22 | Infineon Technologies | MOSFET N-CH 75V 30A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1950pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
| BSC123N10LS G | Infineon Technologies | MOSFET N-CH 100V 71A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 71A · Input Capacitance (Ciss) @ Vds: 4900pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 114W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPD50N06S2-14 | Infineon Technologies | MOSFET N-CH 55V 50A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1485pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPI070N06N G | Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 118nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4100pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP072N10N3 G | Infineon Technologies | MOSFET N-CH 100V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4910pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP77N06S2-12 | Infineon Technologies | MOSFET N-CH 55V 77A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 77A · Input Capacitance (Ciss) @ Vds: 1770pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 158W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPD80N06S3-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 40A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 88nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 107W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSO4410T | Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.1A · Input Capacitance (Ciss) @ Vds: 1280pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| IPD068N10N3 G | Infineon Technologies | MOSFET N-CH 100V 90A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 4910pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP80N06S3-07 | Infineon Technologies | MOSFET N-CH 55V 80A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 51A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7768pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 135W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPB70N10S3-12 | Infineon Technologies | MOSFET N-CH 100V 70A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4355pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSC119N03S G | Infineon Technologies | MOSFET N-CH 30V 30A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1370pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 43W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPB04N03LB | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5203pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 107W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IPB055N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPI12CN10N G | Infineon Technologies | MOSFET N-CH 100V 67A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 67A · Input Capacitance (Ciss) @ Vds: 4320pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| BSC022N03S | Infineon Technologies | MOSFET N-CH 30V 50A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 58nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 7490pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | Доп. информация Искать в поставщиках | ||
 | IPP25N06S3L-22 | Infineon Technologies | MOSFET N-CH 55V 25A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 21.6 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 2260pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPB70N04S3-07 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| SPB80N08S2L-07 | Infineon Technologies | MOSFET N-CH 75V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 67A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 233nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6820pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IPU07N03LA | Infineon Technologies | MOSFET N-CH 25V 30A TO-251 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2653pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP12CNE8N G | Infineon Technologies | MOSFET N-CH 85V 67A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V · Drain to Source Voltage (Vdss): 85V · Gate Charge (Qg) @ Vgs: 64nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 67A · Input Capacitance (Ciss) @ Vds: 4340pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
 | IPB065N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2400pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 56W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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