IPI12CN10N G — MOSFET N-CH 100V 67A TO262-3
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IPP057N08N3 G | Infineon Technologies | MOSFET N-CH 80V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4750pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSO4410 | Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.1A · Input Capacitance (Ciss) @ Vds: 1280pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SPU30N03S2-08 | Infineon Technologies | MOSFET N-CH 30V 30A IPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| IPS03N03LB G | Infineon Technologies | MOSFET N-CH 30V 90A IPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 5200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | Доп. информация Искать в поставщиках | ||
| IPP080N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1900pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSC110N06NS3 G | Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2700pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP100N04S2L-03 | Infineon Technologies | MOSFET N-CH 40V 100A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 230nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 6000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPB034N03L G | Infineon Technologies | MOSFET N-CH 30V 80A TO-263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 51nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| BSC200P03LS G | Infineon Technologies | MOSFET P-CH 30V 12.5A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 48.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12.5A · Input Capacitance (Ciss) @ Vds: 2430pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSZ058N03MSG | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 3100pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-TSDSON | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPD082N10N3 G | Infineon Technologies | MOSFET N-CH 100V 80A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 73A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3980pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSC080P03LS G | Infineon Technologies | MOSFET P-CH 30V 30A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 122.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 6140pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 89W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP42N03S2L13 | Infineon Technologies | MOSFET N-CH 30V 42A TO-220AB Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1130pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
| IPI100P03P3L-04 | Infineon Technologies | MOSFET P-CH 30V 100A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9300pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPS13N03LA G | Infineon Technologies | MOSFET N-CH 25V 30A IPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 8.3nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1043pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 46W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | Доп. информация Искать в поставщиках | ||
| IPB011N04L G | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 346nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 180A · Input Capacitance (Ciss) @ Vds: 29000pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (7 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSC100N03LSG | Infineon Technologies | MOSFET N-CH 30V 44A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 1500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPP77N06S3-09 | Infineon Technologies | MOSFET N-CH 55V 77A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 39A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 103nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 77A · Input Capacitance (Ciss) @ Vds: 5335pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 107W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPI80N08S2-07 | Infineon Technologies | MOSFET N-CH 75V 80A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 180nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IPD70N10S3L-12 | Infineon Technologies | MOSFET N-CH 100V 70A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 77nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 5550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPU13N03LA G | Infineon Technologies | MOSFET N-CH 25V 30A TO-251 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 8.3nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1043pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 46W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SPD50P03L G | Infineon Technologies | MOSFET P-CH 30V 50A TO-252 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 126nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 6880pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (4 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP80N06S2-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPP085N06L G | Infineon Technologies | MOSFET N-CH 60V 80A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A. 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 104nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3500pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 188W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPI03N03LA | Infineon Technologies | MOSFET N-CH 25V 80A I2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 57nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7027pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках |
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