Производитель: Microsemi-PPG  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 330nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 66A  •  Input Capacitance (Ciss) @ Vds: 13190pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 1135W  •  Mounting Type: Through Hole  •  Package / Case: T-MAX  •  Встречается под наим.: APT66M60B2-ND, APT66M60B2MI