Производитель: Vishay/Siliconix  •  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 40nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 9A  •  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 3.1W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)