Производитель: IXYS  •  Вредные вещества: RoHS   Без свинца  •  Серия: GigaMOS™  •  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V  •  Drain to Source Voltage (Vdss): 170V  •  Gate Charge (Qg) @ Vgs: 285nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 210A  •  Input Capacitance (Ciss) @ Vds: 18800pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 1150W  •  Mounting Type: Through Hole  •  Package / Case: TO-264