Производитель: IXYS  •  Вредные вещества: RoHS   Без свинца  •  Серия: GigaMOS™  •  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V  •  Drain to Source Voltage (Vdss): 170V  •  Gate Charge (Qg) @ Vgs: 400nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 260A  •  Input Capacitance (Ciss) @ Vds: 24000pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 1670W  •  Mounting Type: Through Hole  •  Package / Case: PLUS 247