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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT20M22JVRU2 — MOSFET N-CH 200V 97A SOT-227

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs22 mOhm @ 48.5A, 10V
Drain to Source Voltage (Vdss)200V
Gate Charge (Qg) @ Vgs290nC @ 10V
Current - Continuous Drain (Id) @ 25° C97A
Input Capacitance (Ciss) @ Vds8500pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max450W
Mounting TypeChassis Mount
Package / CaseSOT-227
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT4F120KAPT4F120KMicrosemi-PPGMOSFET N-CH 1200V 4A TO-220
Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 1385pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 225W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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APT50M75LFLLGMicrosemi-PPGMOSFET N-CH 500V 57A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 28.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 125nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 57A  ·  Input Capacitance (Ciss) @ Vds: 5590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 570W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M75JLLU3Microsemi-PPGMOSFET N-CH 500V 51A SOT-227
Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 123nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 51A  ·  Input Capacitance (Ciss) @ Vds: 5590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 290W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6017LLLGMicrosemi-PPGMOSFET N-CH 600V 35A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT40N60B2CFGMicrosemi-PPGMOSFET N-CH 600V 40A T-MAX
Серия: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 5040pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 417W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M22JVFRMicrosemi-PPGMOSFET N-CH 200V 97A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 97A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M20JFLLMicrosemi-PPGMOSFET N-CH 200V 104A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 52A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 104A  ·  Input Capacitance (Ciss) @ Vds: 6850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5F100KMicrosemi-PPGMOSFET N-CH 1000V 5A TO-220
Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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APT50M65B2FLLGMicrosemi-PPGMOSFET N-CH 500V 67A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 141nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 7010pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT50M80B2VFRGMicrosemi-PPGMOSFET N-CH 500V 58A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 423nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8797pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT30M30LLLGMicrosemi-PPGMOSFET N-CH 300V 100A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7030pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT29F100B2Microsemi-PPGMOSFET N-CH 1000V 29A T-MAX
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 460 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT47N60SC3GMicrosemi-PPGMOSFET N-CH 600V 47A D3PAK
Серия: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 7015pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 417W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT5010JVFRMicrosemi-PPGMOSFET N-CH 500V 44A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 470nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT22F80BAPT22F80BMicrosemi-PPGMOSFET N-CH 800V 22A TO-247
Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 4595pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT56M50B2APT56M50B2Microsemi-PPGMOSFET N-CH 500V 56A T-MAX
Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 220nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 56A  ·  Input Capacitance (Ciss) @ Vds: 8800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 780W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5010JVRMicrosemi-PPGMOSFET N-CH 500V 44A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 470nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 8900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M22LVFRGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 435nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 10200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10086SVFRGMicrosemi-PPGMOSFET N-CH 1000V 13A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 860 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT50M50L2FLLGMicrosemi-PPGMOSFET N-CH 500V 89A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 44.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 89A  ·  Input Capacitance (Ciss) @ Vds: 10550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6013LLLGMicrosemi-PPGMOSFET N-CH 600V 43A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 21.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 5630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT66M60B2APT66M60B2Microsemi-PPGMOSFET N-CH 600V 66A T-MAX
Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 66A  ·  Input Capacitance (Ciss) @ Vds: 13190pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10090SLLGMicrosemi-PPGMOSFET N-CH 1000V 12A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 71nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1969pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT30M61SLLGMicrosemi-PPGMOSFET N-CH 300V 54A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 61 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 3720pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT51F50JAPT51F50JMicrosemi-PPGMOSFET N-CH 500V 51A SOT-227
Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 290nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 51A  ·  Input Capacitance (Ciss) @ Vds: 11600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 480W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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